NTTFS4930N datasheet(3/7 Pages) ONSEMI

Part #	NTTFS4930N

Description	Power MOSFET 30 V, 23 A, Single N?묬hannel, 8FL Notebook Battery Management

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NTTFS4930N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(on)

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

4.6

ns

Rise Time

tr

17.6

Turn−Off Delay Time

td(off)

13.3

Fall Time

tf

2.5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 20 A

TJ = 25°C

0.97

1.2

V

TJ = 125°C

0.89

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 20 A

15.3

ns

Charge Time

ta

7.4

Discharge Time

tb

7.9

Reverse Recovery Charge

QRR

4.6

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

TA = 25°C

0.38

nH

Drain Inductance

LD

0.054

Gate Inductance

LG

1.3

Gate Resistance

RG

0.6

W

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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