BUL54ASMD datasheet(2/2 Pages) SEME-LAB

Part #	BUL54ASMD

Description	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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Parameter

Test Conditions

Min.

Typ.

Max.

Unit

500

1000

10

100

10

100

10

100

20

40

12

18

58

47

0.05

0.1

0.15

0.2

0.3

0.5

0.8

1.0

0.9

1.1

0.8

1.0

20

35

0.8

0.08

0.2

24

0.04

0.1

V

mA

—

V

MHz

pF

A

ms

Prelim. 7/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

BUL54ASMD

IC = 100mA

IC = 1mA

IE = 1mA

IC = 0

IB = 0

VCC = 500V

IE = 0

VCB = 1000V

TC = 125°C

IC = 0

VEB = 5V

TC = 125°C

IC = 100mA

VCE = 4V

IC = 500mA

VCE = 4V

IC = 1A

VCE = 4V

TC = 125°C

IC = 100mA

IB = 20mA

IC = 500mA

IB = 100mA

IC = 1A

IB = 200mA

IC = 500mA

IB = 100mA

IC = 1A

IB = 200mA

IC = 500mA

VCE = 4V

IC = 100mAVCE = 4V

f = 10MHz

VCB = 20V

f = 1MHz

IE = 0

VCE = 50V

t = 1s

VCC = 150V

IC = 1A

IB1 = 0.2A

IB2 = –0.4A

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Collector – Emitter Sustaining Voltage

Collector – Base Breakdown Voltage

Emitter – Base Breakdown Voltage

Collector – Emitter Cut–Off Current

Collector – Base Cut–Off Current

Emitter Cut–Off Current

DC Current Gain

Collector – Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Base – Emitter On Voltage

Transition Frequency

Output Capacitance

Second Breakdown Collector Current

On Time

Storage Time

Fall Time

* Pulse test tp = 300ms , d £ 2%

VCEO(sus)*

V(BR)CBO*

V(BR)EBO*

ICEO*

ICBO*

IEBO*

hFE*

VCE(sat)*

VBE(sat)*

VBE(on)*

fT

Cob

IS/B

ton

ts

tf

ELECTRICAL CHARACTERISTICS

DYNAMIC CHARACTERISTICS

SECOND BREAKDOWN

SWITCHING CHARACTERISTICS (resistive load)

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