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NCP4682DSQ25T1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP4682DSQ25T1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NVTFS5820NL http://onsemi.com 4 TYPICAL CHARACTERISTICS 0 200 400 600 800 1000 1200 1400 1600 1800 0 102030 40 50 60 Figure 7. Capacitance Variation DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C VGS = 0 V Ciss Coss Crss 0 2 4 6 8 10 0 5 10 15 20 25 30 Figure 8. Gate−to−Source Voltage vs. Total Charge Qg, TOTAL GATE CHARGE (nC) VDS = 48 V ID = 10 A TJ = 25°C QT Qgs Qgd 1 10 100 1000 1 10 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance RG, GATE RESISTANCE (W) VDD = 48 V ID = 10 A VGS = 4.5 V td(off) td(on) tf tr 0 10 20 30 40 0.5 0.6 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ = 25°C VGS = 0 V 0.1 1 10 100 1000 0.1 1 10 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAISN VOLTAGE (V) VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 100 ms 10 ms 1 ms dc 10 ms 0 10 20 30 40 60 25 50 75 100 125 150 Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature TJ, STARTING JUNCTION TEMPERATURE (°C) 50 175 ID = 37 A |
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