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NCP4682DSQ18T1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NCP4682DSQ18T1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 0 1 Publication Order Number: NVTFS5826NL/D NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N−Channel Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NV Prefix for Automotive and Other Applications Requiring AEC−Q101 Qualified Site and Change Controls • These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Cur- rent RYJ−mb (Notes 1, 2, 3, 4) Steady State Tmb = 25°C ID 20 A Tmb = 100°C 14 Power Dissipation RYJ−mb (Notes 1, 2, 3) Tmb = 25°C PD 22 W Tmb = 100°C 11 Continuous Drain Cur- rent RqJA (Notes 1 & 3, 4) Steady State TA = 25°C ID 7.6 A TA = 100°C 5.4 Power Dissipation RqJA (Notes 1, 3) TA = 25°C PD 3.2 W TA = 100°C 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 127 A Operating Junction and Storage Temperature TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS 18 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL(pk) = 20 A, L = 0.1 mH, RG = 25 W) EAS 20 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Mounting Board (top) − Steady State (Note 2 and 3) RYJ−mb 6.8 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 47 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION http://onsemi.com Device Package Shipping† V(BR)DSS RDS(on) MAX ID MAX 60 V 24 mW @ 10 V 20 A †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. WDFN8 (m8FL) CASE 511AB MARKING DIAGRAM 32 mW @ 4.5 V NVTFS5826NLTAG WDFN8 (Pb−Free) 1500 / Tape & Reel (Note: Microdot may be in either location) 1 5826 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 1 NVTFS5826NLTWG WDFN8 (Pb−Free) 5000 / Tape & Reel 5826 AYWWG G D D D D S S S G N−Channel D (5 − 8) S (1, 2, 3) G (4) |
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