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NCP4685 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCP4685
Description  150 mA, Ultra Low Supply Current, Low Dropout Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP4685 Datasheet(HTML) 2 Page - ON Semiconductor

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NVTFS5826NL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
1.0
mA
TJ = 125°C
10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
2.5
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 10 A
19
24
mW
VGS = 4.5 V, ID = 10 A
25
32
Forward Transconductance
gFS
VDS = 15 V, ID = 5 A
8
S
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
850
pF
Output Capacitance
Coss
85
Reverse Transfer Capacitance
Crss
50
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 48 V, ID = 10 A
8.3
nC
Threshold Gate Charge
QG(TH)
1
nC
Gate−to−Source Charge
QGS
3
Gate−to−Drain Charge
QGD
4
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 48 V, ID = 10 A
16
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(on)
VGS = 4.5 V, VDS = 48 V,
ID = 10 A
9
ns
Rise Time
tr
29
Turn−Off Delay Time
td(off)
14
Fall Time
tf
21
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.8
1.2
V
TJ = 125°C
0.7
Reverse Recovery Time
tRR
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 10 A
18
ns
Charge Time
ta
14
Discharge Time
tb
4
Reverse Recovery Charge
QRR
17
nC
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.


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