Prelim. 3/95

LAB

SEME

BUL50A

Website: http://www.semelab.co.uk

Collector – Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Operating and Storage Temperature Range

1000V

500V

10V

15A

30A

5A

125W

–55 to +175°C

MECHANICAL DATA

Dimensions in mm (inches)

1

3

2

3.55 (0.140)

3.81 (0.150)

0.40 (0.016)

0.79 (0.031)

2.21 (0.087)

2.59 (0.102)

1.01 (0.040)

1.40 (0.055)

15.49 (0.610)

16.26 (0.640)

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

1.65 (0.065)

2.13 (0.084)

5.25 (0.215)

BSC

2.87 (0.113)

3.12 (0.123)

5.5

11

1.15

0.95

13.6

min

4.25

4.15

Dia.

4.4

15.2

max

14

2.0

4.6

max

12.7

max

21.0

max

0.4

1.6

13

2

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

• FAST SWITCHING

• HIGH ENERGY RATING

• EFFICIENT POWER SWITCHING

• MILITARY AND HI–REL VERSIONS

AVAILABLE IN METAL AND CERAMIC

SURFACE MOUNT PACKAGES

Pin 1 – Base

TO–247

Pad 2 – Collector

Pad 3 – Emitter

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

Pin 1 – Base

SOT93

Pad 2 – Collector

Pad 3 – Emitter