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ADG5213BCPZ-RL7 Datasheet(PDF) 3 Page - Analog Devices |
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ADG5213BCPZ-RL7 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 20 page  ADG5212/ADG5213 Rev. 0 | Page 3 of 20 SPECIFICATIONS ±15 V DUAL SUPPLY VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted. Table 1. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range VDD to VSS V max On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA, see Figure 24 200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between Channels, ∆RON 2 Ω typ VS = ±10 V, IS = −1 mA 8 9 10 Ω max On-Resistance Flatness, RFLAT(ON) 38 Ω typ VS = ±10 V, IS = −1 mA 50 65 70 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) 0.01 nA typ VS = ±10 V, VD = ∓10 V, see Figure 23 0.1 0.2 0.4 nA max Drain Off Leakage, ID (Off) 0.01 nA typ VS = ±10 V, VD = ∓10 V, see Figure 23 0.1 0.2 0.4 nA max Channel On Leakage, ID (On), IS (On) 0.02 nA typ VS = VD = ±10 V, see Figure 26 0.2 0.25 0.9 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 tON 175 ns typ RL = 300 Ω, CL = 35 pF 210 255 280 ns max VS = 10 V, see Figure 30 tOFF 140 ns typ RL = 300 Ω, CL = 35 pF 170 195 215 ns max VS = 10 V, see Figure 30 Break-Before-Make Time Delay, tD (ADG5213 Only) 40 ns typ RL = 300 Ω, CL = 35 pF 20 ns min VS1 = VS2 = 10 V, see Figure 29 Charge Injection, QINJ 0.07 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 31 Off Isolation −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 25 Channel-to-Channel Crosstalk −105 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 27 −3 dB Bandwidth 435 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 28 Insertion Loss −6.8 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 28 CS (Off) 3 pF typ VS = 0 V, f = 1 MHz CD (Off) 5 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) 8 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 μA typ Digital inputs = 0 V or VDD 55 70 μA max ISS 0.001 μA typ Digital inputs = 0 V or VDD 1 μA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test. |
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