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PMEG2005ELD Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PMEG2005ELD
Description  20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PMEG2005ELD Datasheet(HTML) 4 Page - NXP Semiconductors

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PMEG2005ELD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 4 May 2011
4 of 14
NXP Semiconductors
PMEG2005ELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
6.
Thermal characteristics
[1]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5]
Soldering point of cathode tab.
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1][2] --
370
K/W
[1][3] --
190
K/W
[1][4] --
125
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[5] --
50
K/W
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac569
tp (s)
10–3
102
103
10
1
10–2
10–1
102
103
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0


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