SKM400GA12V datasheet(1/5 Pages) SEMIKRON

Part #	SKM400GA12V

Description	SEMITRANS

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Manufacturer	SEMIKRON [Semikron International]

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SKM400GA12V

Rev. 3 – 23.03.2011

1

SEMITRANS® 4

GA

SKM400GA12V

Features

• V-IGBT = 6. Generation Trench V-IGBT

(Fuji)

• CAL4 = Soft switching 4. Generation

CAL-diode

• Isolated copper baseplate using DBC

technology (Direct Copper Bonding)

• UL recognized, file no. E63532

• Increased power cycling capability

• With integrated gate resistor

• Low switching losses at high di/dt

Typical Applications*

•AC inverter drives

•UPS

• Electronic welders

• Switched reluctance motor

Remarks

• Case temperature limited to

Tc = 125°C max, recomm.

Top = -40 ... +150°C, product

rel. results valid for Tj = 150°

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

VCES

Tj =25°C

1200

V

IC

Tj = 175 °C

Tc =25 °C

612

A

Tc =80 °C

467

A

ICnom

400

A

ICRM

ICRM = 3xICnom

1200

A

VGES

-20 ... 20

V

tpsc

VCC = 720 V

VGE ≤ 20 V

VCES ≤ 1200 V

Tj =125 °C

10

µs

Tj

-40 ... 175

°C

Inverse diode

IF

Tj = 175 °C

Tc =25 °C

440

A

Tc =80 °C

329

A

IFnom

400

A

IFRM

IFRM = 3xIFnom

1200

A

IFSM

tp = 10 ms, sin 180°, Tj =25°C

1980

A

Tj

-40 ... 175

°C

Module

It(RMS)

Tterminal =80 °C

500

A

Tstg

-40 ... 125

°C

Visol

AC sinus 50Hz, t = 1 min

4000

V

Characteristics

Symbol Conditions

min.

typ.

max.

Unit

IGBT

VCE(sat)

IC =400 A

VGE =15 V

chiplevel

Tj =25 °C

1.75

2.20

V

Tj =150 °C

2.20

2.50

V

VCE0

Tj =25 °C

0.94

1.04

V

Tj =150 °C

0.88

0.98

V

rCE

VGE =15 V

Tj =25 °C

2.02

2.9

m

Tj =150 °C

3.30

3.80

m

VGE(th)

VGE=VCE, IC = 16 mA

5.5

6

6.5

V

ICES

VGE =0 V

VCE = 1200 V

Tj =25 °C

0.1

0.3

mA

Tj =150 °C

mA

Cies

VCE =25V

VGE =0 V

f=1MHz

24.04

nF

Coes

f=1MHz

2.36

nF

Cres

f=1MHz

2.356

nF

QG

VGE = - 8 V...+ 15 V

4420

nC

RGint

1.9



td(on)

VCC = 600 V

IC =400 A

VGE =±15 V

RG on =3 

RG off =3 

di/dton = 9800 A/µs

di/dtoff =5000 A/µs

du/dtoff = 7600 V/

µs

Tj =150 °C

350

ns

tr

Tj =150 °C

60

ns

Eon

Tj =150 °C

39

mJ

td(off)

Tj =150 °C

700

ns

tf

Tj =150 °C

65

ns

Eoff

Tj =150 °C

42

mJ

Rth(j-c)

per IGBT

0.072

K/W

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