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SKM400GA12V Datasheet(PDF) 1 Page - Semikron International |
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SKM400GA12V Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SKM400GA12V © by SEMIKRON Rev. 3 – 23.03.2011 1 SEMITRANS® 4 GA SKM400GA12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* •AC inverter drives •UPS • Electronic welders • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tj = 175 °C Tc =25 °C 612 A Tc =80 °C 467 A ICnom 400 A ICRM ICRM = 3xICnom 1200 A VGES -20 ... 20 V tpsc VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj =125 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25 °C 440 A Tc =80 °C 329 A IFnom 400 A IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1980 A Tj -40 ... 175 °C Module It(RMS) Tterminal =80 °C 500 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =400 A VGE =15 V chiplevel Tj =25 °C 1.75 2.20 V Tj =150 °C 2.20 2.50 V VCE0 Tj =25 °C 0.94 1.04 V Tj =150 °C 0.88 0.98 V rCE VGE =15 V Tj =25 °C 2.02 2.9 m Tj =150 °C 3.30 3.80 m VGE(th) VGE=VCE, IC = 16 mA 5.5 6 6.5 V ICES VGE =0 V VCE = 1200 V Tj =25 °C 0.1 0.3 mA Tj =150 °C mA Cies VCE =25V VGE =0 V f=1MHz 24.04 nF Coes f=1MHz 2.36 nF Cres f=1MHz 2.356 nF QG VGE = - 8 V...+ 15 V 4420 nC RGint 1.9 td(on) VCC = 600 V IC =400 A VGE =±15 V RG on =3 RG off =3 di/dton = 9800 A/µs di/dtoff =5000 A/µs du/dtoff = 7600 V/ µs Tj =150 °C 350 ns tr Tj =150 °C 60 ns Eon Tj =150 °C 39 mJ td(off) Tj =150 °C 700 ns tf Tj =150 °C 65 ns Eoff Tj =150 °C 42 mJ Rth(j-c) per IGBT 0.072 K/W |
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