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SKM150GAL12V Datasheet(PDF) 2 Page - Semikron International |
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SKM150GAL12V Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SKM150GAL12V 2 Rev. 3 – 23.03.2011 © by SEMIKRON td(on) VCC = 600 V IC =150 A VGE =±15 V RG on =1.5 RG off =1.5 di/dton = 4400 A/µs di/dtoff =1800 A/µs du/dtoff = 8100 V/ µs Tj =150 °C 258 ns tr Tj =150 °C 32 ns Eon Tj =150 °C 13.5 mJ td(off) Tj =150 °C 388 ns tf Tj =150 °C 62 ns Eoff Tj =150 °C 14.2 mJ Rth(j-c) per IGBT 0.19 K/W Inverse diode VF = VEC IF = 150 A VGE =0 V chip Tj =25 °C 2.14 2.46 V Tj =150 °C 2.07 2.38 V VF0 Tj =25 °C 1.3 1.5 V Tj =150 °C 0.9 1.1 V rF Tj =25 °C 5.6 6.4 m Tj =150 °C 7.8 8.5 m IRRM IF = 150 A di/dtoff =5500 A/µs VGE =±15 V VCC = 600 V Tj =150 °C 160 A Qrr Tj =150 °C 21.5 µC Err Tj =150 °C 8.9 mJ Rth(j-c) per diode 0.31 K/W Freewheeling diode VF = VEC IF = 150 A VGE =0 V chip Tj =25 °C 2.14 2.46 V Tj =150 °C 2.07 2.38 V VF0 Tj =25 °C 1.3 1.5 V Tj =150 °C 0.9 1.1 V rF Tj =25 °C 5.6 6.4 m Tj =150 °C 7.8 8.5 m IRRM IF = 150 A di/dtoff =5900 A/µs VGE =±15 V VCC = 600 V Tj =150 °C 116 A Qrr Tj =150 °C 22 µC Err Tj =150 °C 8.2 mJ Rth(j-c) per Diode 0.31 K/W Module LCE 30 nH RCC'+EE' terminal-chip TC =25°C 0.65 m TC =125 °C 1m Rth(c-s) per module 0.04 0.05 K/W Ms to heat sink M6 3 5 Nm Mt to terminals M5 2.5 5 Nm Nm w 160 g Characteristics Symbol Conditions min. typ. max. Unit SEMITRANS® 2 GAL SKM150GAL12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* •DC/DC – converter • Brake chopper • Switched reluctance motor •DC – Motor Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° |
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