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SKM100GB12V Datasheet(PDF) 2 Page - Semikron International

Part # SKM100GB12V
Description  SEMITRANS
Download  5 Pages
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SKM100GB12V Datasheet(HTML) 2 Page - Semikron International

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SKM100GB12V
2
Rev. 5 – 23.03.2011
© by SEMIKRON
Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Inverse diode
VF = VEC IF = 100 A
VGE =0 V
chip
Tj =25 °C
2.20
2.52
V
Tj =150 °C
2.15
2.47
V
VF0
Tj =25 °C
1.3
1.5
V
Tj =150 °C
0.9
1.1
V
rF
Tj =25 °C
9.0
10.2
m
Tj =150 °C
12.5
13.7
m
IRRM
IF = 100 A
di/dtoff =3050 A/µs
VGE =±15 V
VCC = 600 V
Tj =150 °C
90
A
Qrr
Tj =150 °C
15
µC
Err
Tj =150 °C
5.7
mJ
Rth(j-c)
per diode
0.48
K/W
Module
LCE
30
nH
RCC'+EE'
terminal-chip
TC =25°C
0.65
m
TC =125 °C
1m
Rth(c-s)
per module
0.04
0.05
K/W
Ms
to heat sink M6
3
5
Nm
Mt
to terminals M5
2.5
5
Nm
Nm
w
160
g
SEMITRANS® 2
GB
SKM100GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°


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