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SKM50GB063D Datasheet(PDF) 1 Page - Semikron International |
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SKM50GB063D Datasheet(HTML) 1 Page - Semikron International |
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1 / 5 page  SKM50GB063D © by SEMIKRON Rev. 2 – 22.04.2010 1 SEMITRANS® 2 GB Superfast NPT-IGBT Modules SKM50GB063D Target Data Features • NPT = non punch-through IGBT technology • High short circuit capability, self limiting to 6 x IC • Pos. temp.-coeff. of VCEsat • Isolated copper baseplate Typical Applications* • Switched mode power supplies •UPS • Three phase inverters for servo / AC motor speed control Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 600 V IC Tj = 150 °C Tc =25°C 70 A Tc =75°C 51 A ICnom 50 A ICRM ICRM = 2xICnom 100 A VGES -20 ... 20 V tpsc VCC = 300 V VGE ≤ 20 V VCES ≤ 600 V Tj = 125 °C 10 µs Tj -55 ... 150 °C Inverse diode IF Tc =25°C 75 A Tc =80°C 45 A IFnom 50 A IFRM IFRM = 2xIFnom 100 A IFSM tp = 10 ms, sin 180°, Tj =25°C A Tj -40 ... 150 °C Module It(RMS) Tterminal <80°C 200 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =50 A VGE =15V chiplevel Tj =25°C 2.1 2.5 V Tj = 125 °C 2.4 2.8 V VCE0 Tj =25°C 1.05 1.3 V Tj = 125 °C 11.2 V rCE VGE =15V Tj =25°C 21.0 24.0 mΩ Tj = 125 °C 28.0 32.0 mΩ VGE(th) VGE=VCE, IC = 1 mA 4.5 5.5 6.5 V ICES VGE =0V VCE =600 V Tj =25°C 0.1 0.3 mA mA Cies VCE =25 V VGE =0V f=1MHz 2.2 nF Coes f=1MHz nF Cres f=1MHz 0.2 nF QG VGE =- 8 V...+ 20 V nC RGint Tj =25°C Ω td(on) VCC = 300 V IC =50 A VGE =±15 V RG on =22 Ω RG off =22 Ω Tj = 125 °C 50 ns tr Tj = 125 °C 40 ns Eon Tj = 125 °C 2.5 mJ td(off) Tj = 125 °C 300 ns tf Tj = 125 °C 30 ns Eoff Tj = 125 °C 1.8 mJ Rth(j-c) per IGBT 0.5 K/W |
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