BLS7G2729LS-350P datasheet(4/10 Pages) NXP

Part #	BLS7G2729LS-350P

Description	LDMOS S-band radar power transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLS7G2729L-350P_LS-350P

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Objective data sheet

Rev. 1 — 24 May 2011

4 of 10

NXP Semiconductors

BLS7G2729L(S)-350P

LDMOS S-band radar power transistor

7.1 Ruggedness in class-AB operation

The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load

mismatch corresponding to VSWR = 5 : 1 through all phases under the following

conditions: VDS =32 V; IDq =200 mA; PL =350 W; tp = 300 μs; δ = 10 %.

Table 8.

Typical impedance

f

ZS

ZL

GHz

Ω

2.7

<tbd>

2.8

<tbd>

2.9

<tbd>

Fig 1.

Definition of transistor impedance

001aaf059

drain

ZL

ZS

gate

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