MD8IC970NR1 MD8IC970GNR1

1

RF Device Data

Freescale Semiconductor

RF LDMOS Wideband Integrated

Power Amplifiers

The MD8IC970N wideband integrated circuit is designed with on--chip

prematching that makes it usable from 136 to 940 MHz. This multi--stage

structure is rated for 26 to 32 Volt operation and covers all typical base station

modulation formats. This device has a 2--stage design with off--chip matching

for the input, interstage and output networks to cover the desired frequency

sub--band.

Frequency

(dB)

PAE

(%)

IMD

(dBc)

850 MHz

30.6

40.1

--30.5

900 MHz

31.9

42.4

--31.0

940 MHz

32.6

42.1

--31.3

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW

Enhanced Ruggedness

≃ 79 Watts CW

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

• On--Chip Prematching. On--Chip Stabilization.

• Integrated Quiescent Current Temperature Compensation with

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.

Document Number: MD8IC970N

Rev. 2, 5/2011

Freescale Semiconductor

Technical Data

850--940 MHz, 35 W AVG., 28 V

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

MD8IC970NR1

MD8IC970GNR1

CASE 1866--02

TO--270 WBL--16

PLASTIC

MD8IC970NR1

CASE 1867--02

TO--270 WBL--16 GULL

PLASTIC

MD8IC970GNR1

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistors.

GND

2

3

4

5

8

9

16

10

11

12

GND

15

7

13

(Top View)

6

1

14

Quiescent Current

Quiescent Current

GND

GND

© Freescale Semiconductor, Inc., 2011. All rights reserved.