IDT12S60C_08 datasheet(1/7 Pages) INFINEON

Part #	IDT12S60C

Description	2nd Generation thinQ SiC Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDT12S60C

2

nd Generation thinQ!TM SiC Schottky Diode

Features

• Revolutionary semiconductor material - Silicon Carbide

• Switching behavior benchmark

• No reverse recovery/ No forward recovery

• No temperature influence on the switching behavior

• High surge current capability

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target applications

• Breakdown voltage tested at 5mA

2)

thinQ! 2G Diode specially designed for fast switching applications like:

• CCM PFC

• Motor Drives

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous forward current

I F

T C<140 °C

12

A

RMS forward current

I F,RMS

f =50 Hz

18

Surge non-repetitive forward current,

sine halfwave

I F,SM

T C=25 °C, t p=10 ms

98

Repetitive peak forward current

I F,RM

T j=150 °C,

T C=100 °C, D =0.1

49

Non-repetitive peak forward current

I F,max

T C=25 °C, t p=10 µs

410

i²t value

∫i

2dt

T C=25 °C, t p=10 ms

48

A

2s

Repetitive peak reverse voltage

V RRM

600

V

Diode ruggedness dv/dt

dv/ dt

VR=0…480V

50

V/ns

Power dissipation

P tot

T C=25 °C

115

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

Mounting torque

M3 and M3.5 screws

60

Ncm

Value

V DC

600

V

Q c

30

nC

I F

12

A

Product Summary

PG-TO220-2-2

Type

Package

Marking

Pin 1

Pin 2

IDT12S60C

PG-TO220-2-2

D12S60C

C

A

Rev. 2.1

page 1

2008-06-09

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IDT12S60C Datasheet(PDF) 1 Page - Infineon Technologies AG

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