IDT10S60C datasheet(2/7 Pages) INFINEON

Part #	IDT10S60C

Description	2nd Generation thinQ SiC Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDT10S60C

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

1.5

K/W

Thermal resistance,

junction - ambient

R thJA

leaded

-

62

Soldering temperature,

wavesoldering only allowed at leads

T sold

1.6mm (0.063 in.) from

case for 10s

-

260

°C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

DC blocking voltage

V DC

I R=0.14 mA

600

-

V

Diode forward voltage

V F

I F=10 A, T j=25 °C

-

1.5

1.7

I F=10 A, T j=150 °C

-

1.7

2.1

Reverse current

I R

V R=600 V, T j=25 °C

-

1.4

140

µA

V R=600 V, T j=150 °C

-

5

1400

AC characteristics

Total capacitive charge

Q c

-24-

nC

Switching time

3)

t c

-

<10

ns

Total capacitance

C

V R=1 V, f =1 MHz

-

480

-

pF

V R=300 V, f =1 MHz

-60-

V R=600 V, f =1 MHz

-60-

4) Only capacative charge occuring, guaranteed by design.

Values

V R=400 V, I F≤I F,max,

di F/dt =200 A/µs,

T j=150 °C

3) t

c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and

di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to

absence of minority carrier injection.

1) J-STD20 and JESD22

2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.

Rev. 2.1

page 2

2008-06-09

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