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IDT10S60C Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IDT10S60C Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 7 page IDT10S60C Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.5 K/W Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6mm (0.063 in.) from case for 10s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.14 mA 600 - - V Diode forward voltage V F I F=10 A, T j=25 °C - 1.5 1.7 I F=10 A, T j=150 °C - 1.7 2.1 Reverse current I R V R=600 V, T j=25 °C - 1.4 140 µA V R=600 V, T j=150 °C - 5 1400 AC characteristics Total capacitive charge Q c -24- nC Switching time 3) t c - - <10 ns Total capacitance C V R=1 V, f =1 MHz - 480 - pF V R=300 V, f =1 MHz -60- V R=600 V, f =1 MHz -60- 4) Only capacative charge occuring, guaranteed by design. Values V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C 3) t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. Rev. 2.1 page 2 2008-06-09 |
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