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2N3439CSM4 Datasheet(PDF) 2 Page - Seme LAB

Part No. 2N3439CSM4
Description  HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
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Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
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2N3439CSM4
LAB
SEME
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 50mA
IB = 0
VCE = 450V
IE = 0
VCB = 300V
TC = 125°C
IC = 0
VEB = 6V (off)
IC = 50mA
IB = 4mA
IC = 50mA
IB = 4mA
IC = 20mA
IC = 10mA
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
VCEO(sus)* Collector – Emitter Sustaining Voltage
ICEX*
Collector Cut-off Current (IC = 0)
ICBO*
Collector – Base Cut-off Current
IEBO*
Emitter Cut-off Current (IC = 0)
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE*
DC Current Gain
350
500
20
10
20
0.5
1.3
40
160
V
µA
µA
µA
µA
V
fT
Transition Frequency
Cob
Output Capacitance
hfe
Small Signal Current Gain
IC = 10mA
VCE = 10V
f = 5MHz
VCB = 10V
IE = 0
f = 1.0MHz
IC = 5mA
VCE = 10V
f = 1kHz
15
10
25
MHz
pF
* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)




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