IDC05S120E datasheet(2/5 Pages) INFINEON

Part #	IDC05S120E

Description	1200V thinQ!TM SiC Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDC05S120E

Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009

Maximum Ratings

Parameter

Symbol

Condition

Value

Unit

Repetitive peak reverse voltage

VRRM

Tvj = 25 °C

1200

DC blocking voltage

VDC

1200

V

Continuous forward current,

limited by Tvjmax

IF

Tvj < 150°C

5

TC =25

°C, tP =10 ms

29

Surge non repetitive forward current,

sine halfwave

IF,SM

TC =150

°C, tP =10 ms

25

Repetitive peak forward current,

limited by thermal resistance Rth

IF,RM

TC = 100

°C, Tvj =150°C,

D=0.1

23

Non-repetitive peak forward current

IF,max

TC =25

°C, tP=10µs

110

A

TC =25

°C, tP =10 ms

4

i

2 t value

dt

i

∫ 2

TC =150

°C, tP =10 ms

3

A

2s

Operating junction and storage

temperature range

Tvj ,

Tstg

-55...+175

°C

Static Characteristics (tested on wafer)

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Reverse current

IR

VR=1200V, Tvj =25

°C

5

120

µA

Diode forward voltage

VF

IF=5A, Tvj =25

°C

1.6

1.8

V

Static Characteristics (not subject to production test - verified by design / characterization)

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Reverse current

IR

VR=1200V, Tvj =150

°C

20

1000

µA

Diode forward voltage

VF

IF=5A, Tvj =150

°C

2.5

3

V

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