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SEMIX402GAL066HDS Datasheet(PDF) 2 Page - Semikron International |
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SEMIX402GAL066HDS Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SEMiX402GAL066HDs 2 Rev. 0 – 16.04.2010 © by SEMIKRON td(on) VCC = 300 V IC =400 A RG on =4.5 Ω RG off =4.5 Ω Tj = 150 °C 150 ns tr Tj = 150 °C 125 ns Eon Tj = 150 °C 22 mJ td(off) Tj = 150 °C 900 ns tf Tj = 150 °C 65 ns Eoff Tj = 150 °C 24 mJ Rth(j-c) per IGBT 0.12 K/W Inverse diode VF = VEC IF =400 A VGE =0V chip Tj =25°C 1.4 1.60 V Tj = 150 °C 1.4 1.6 V VF0 Tj =25°C 0.9 1 1.1 V Tj = 150 °C 0.75 0.85 0.95 V rF Tj =25°C 0.8 1.0 1.3 mΩ Tj = 150 °C 1.1 1.4 1.6 mΩ IRRM IF =400 A di/dtoff = 3700 A/µs VGE =-8 V VCC = 300 V Tj = 150 °C 250 A Qrr Tj = 150 °C 47 µC Err Tj = 150 °C 10 mJ Rth(j-c) per diode 0.15 K/W Freewheeling diode VF = VEC IF =400 A VGE =0V chip Tj =25°C 1.3 1.5 V Tj = 150 °C 1.3 1.5 V VF0 Tj =25°C 0.9 1 1.1 V Tj = 150 °C 0.75 0.85 0.95 V rF Tj =25°C 0.7 0.9 1.1 mΩ Tj = 150 °C 1.0 1.2 1.4 mΩ IRRM IF =400 A di/dtoff = 3700 A/µs VGE =-8 V VCC = 300 V Tj = 150 °C 250 A Qrr Tj = 150 °C 47 µC Err Tj = 150 °C 10 mJ Rth(j-c) per diode 0.15 K/W Module LCE 18 nH RCC'+EE' res., terminal-chip TC =25°C 0.7 mΩ TC = 125 °C 1mΩ Rth(c-s) per module 0.045 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 250 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K Characteristics Symbol Conditions min. typ. max. Unit SEMiX® 2s GAL Trench IGBT Modules SEMiX402GAL066HDs Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance |
Similar Part No. - SEMIX402GAL066HDS_10 |
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Similar Description - SEMIX402GAL066HDS_10 |
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