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SEMIX302GAL12E4S Datasheet(PDF) 1 Page - Semikron International |
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SEMIX302GAL12E4S Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SEMiX302GAL12E4s © by SEMIKRON Rev. 0 – 05.05.2010 1 SEMiX® 2s GAL Trench IGBT Modules SEMiX302GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 0,5 Ω RGoff,main = 0,5 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =25°C 463 A Tc =80°C 356 A ICnom 300 A ICRM ICRM = 3xICnom 900 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25°C 356 A Tc =80°C 266 A IFnom 300 A IFRM IFRM = 3xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1620 A Tj -40 ... 175 °C Freewheeling diode IF Tj = 175 °C Tc =25°C 356 A Tc =80°C 266 A IFnom 300 A IFRM IFRM = 3xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj =25°C 1620 A Tj -40 ... 175 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =300 A VGE =15V chiplevel Tj =25°C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj =25°C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =15V Tj =25°C 3.3 3.8 mΩ Tj = 150 °C 5.0 5.3 mΩ VGE(th) VGE=VCE, IC =12mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =25 V VGE =0V f=1MHz 18.6 nF Coes f=1MHz 1.16 nF Cres f=1MHz 1.02 nF QG VGE =- 8 V...+ 15 V 1700 nC RGint Tj =25°C 2.50 Ω |
Similar Part No. - SEMIX302GAL12E4S_10 |
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