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2N2060A Datasheet(PDF) 2 Page - Seme LAB

Part No. 2N2060A
Description  DUAL AMPLIFIER TRANSISTOR
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Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
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Prelim. 4/96
LAB
SEME
2N2060A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 100mA
RBE £ 10W
IC = 30mA
IB = 0
IC = 100mAIE = 0
IE = 100mAIC = 0
VCB = 80V
IE = 0
TA = 150°C
VBE = 5V
IC = 0
IC = 10mAVCE = 5V
IC = 100mAVCE = 5V
IC = 1mA
VCE = 5V
IC = 10mA
VCE = 5V
IC = 50mA
IB = 5mA
IC = 50mA
IB = 5mA
IC = 50mA
VCE = 10V
f = 20MHz
IE = 0
VCB = 10V
f = 1MHz
IC = 0
VBE = 0.5V
f = 1MHz
IC = 1mA
VCE = 5V
f = 1kHz
IC = 1mA
VCB = 10V
f = 1kHz
IC = 1mA
VCE = 5V
f = 1kHz
IC = 100mAVCE = 5V
IC = 1mA
VCE = 5V
IC = 100mAVCE = 5V
IC = 1mA
VCE = 5V
IC = 100mAVCE = 5V
TA = –55 to +125°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
VCER(sus)* Collector – Emitter Breakdown Voltage
VCEO(sus)* Collector – Emitter Sustaining Voltage
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
DC Current Gain
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
Cib
Input Capacitance
hie
Input Impedance
hib
Input Impedance
hfe
Small Signal Current Gain
hoe
Output Admittance
hFE1/hFE2
DC Current Gain Ratio 1
½VBE1-VBE2½ Base – Emitter Voltage Differential
D(VBE1-VBE2) Base – Emitter Voltage Differential
DT
Change Due To Temperature
80
60
100
7
0.002
10
2.0
25
75
30
90
40
120
50
150
0.6
0.9
60
15
85
1000
4000
20
30
50
150
16
0.9
1.0
0.9
1.0
3.0
5.0
5.0
V
V
V
V
mA
nA
V
MHz
pF
pF
W
W
mmhos
mV
mV/°C
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
MATCHING CHARACTERISTICS
*
Pulse Test: tp £ 300ms, d£ 2%.
1) The lowest hFE reading is taken as hFE1 for this ratio.




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