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BTS50055-1TMC Datasheet(PDF) 5 Page - Infineon Technologies AG |
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BTS50055-1TMC Datasheet(HTML) 5 Page - Infineon Technologies AG |
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5 / 17 page  Data Sheet BTS50055-1TMC Page 5 of 17 2010-April-27 Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Protection Functions 16) Short circuit current limit (Tab to pins 1,2,6,7) 17) VON = 6 V Tc =-40°C: Tc =25°C: Tc =+150°C: IL(SC) IL(SC) IL(SC) -- 45 -- 110 130 115 -- 180 -- A Output clamp 18 ) IL= 40 mA: (inductive load switch off) see diagram Ind. and overvolt. output clamp page 7 -VOUT(CL) 14 17 20 V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage),IL= 40 mA VON(CL) 39 42 47 V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆Tjt -- 10 -- K Reverse Battery Reverse battery voltage 19 ) -Vbb -- -- 32 V On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25°C: Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 k Ω Tj = 150°C: RON(rev) -- 5.4 8.9 7.0 12.3 m Ω Integrated resistor in Vbb line Rbb -- 120 -- Ω Diagnostic Characteristics Current sense ratio, IL = 90 A,Tj =-40°C: static on-condition, Tj =25°C: kILIS = IL : IIS, Tj =150°C: VON < 1.5 V 20), IL = 20 A,Tj =-40°C: VIS <VOUT - 5V, Tj =25°C: VbIN > 4.0 V Tj =150°C: see diagram on page 11 IL = 10 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 4 A,Tj =-40°C: Tj =25°C: Tj =150°C: kILIS 12 400 12 000 11 400 12 200 12 000 11 500 11 100 11 500 11 400 10 000 11 000 10 600 14 200 13 700 12 800 14 800 14 100 13 200 15 300 14 500 13 300 17 600 15 600 13 800 16 000 15 400 14 200 17 400 16 200 15 000 19 500 17 500 15 200 28 500 22 000 18 000 I IS=0 by IIN =0 (e.g. during deenergizing of inductive loads): 16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 17 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit. The lifetime will be reduced under such conditions. 18 ) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 19 ) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 8. 20 ) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . |
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