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BTS5120-2EKA Datasheet(PDF) 10 Page - Infineon Technologies AG |
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BTS5120-2EKA Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 54 page BTS5120-2EKA General Product Characteristics Data Sheet 10 Rev. 2.0, 2010-08-02 PROFET™+ 12V Notes 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Maximum energy dissipation Single pulse (one channel) E AS –– 15 mJ I L(0) = 2 A T J(0) = 150 °C V S = 13.5 V P_4.1.23 Voltage at power transistor V DS – – 41 V – P_4.1.26 Currents Current through ground pin I GND -10 -150 –10 20 mA – t < 2 min P_4.1.27 Temperatures Junction temperature T J -40 – 150 °C – P_4.1.28 Storage temperature T STG -55 – 150 °C – P_4.1.30 ESD Susceptibility ESD susceptibility (all pins) V ESD -2 – 2 kV 4) HBM P_4.1.31 ESD susceptibility OUT Pin vs. GND and V S connected V ESD -4 – 4 kV 4) HBM P_4.1.32 ESD susceptibility V ESD -500 – 500 V 5) CDM P_4.1.33 ESD susceptibility pin (corner pins) V ESD -750 – 750 V 5) CDM P_4.1.34 1) Not subject to production test. Specified by design. 2) Hardware set-up in accordance to AEC Q100-012 and AEC Q101-006. 3) V S(LD) is setup without the DUT connected to the generator per ISO 7637-1. 4) ESD susceptibility HBM according to EIA/JESD 22-A 114B. 5) “CDM” EIA/JESD22-C101 or ESDA STM5.3.1 Table 2 Absolute Maximum Ratings (cont’d)1) T J = -40°C to +150°C; (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Number Min. Typ. Max. |
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