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BSZ900N20NS3G Datasheet(PDF) 7 Page - Infineon Technologies AG |
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BSZ900N20NS3G Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page BSZ900N20NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 # V GS=f(Q gate); I D=7.6 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 40 V 100 V 160 V 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 Q gate [nC] 180 190 200 210 220 230 -60 -20 20 60 100 140 180 T j [ & C] |
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