BSS169 datasheet(2/9 Pages) INFINEON

Part #	BSS169

Description	SIPMOS Small-Signal-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 9 page

BSS169

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - ambient

R thJA

minimal footprint

-

350

K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=-10 V, I D=250 µA

100

-

V

Gate threshold voltage

V GS(th)

V DS=3 V, I D=50 µA

-2.9

-2.2

-1.8

Drain-source cutoff current

I D(off)

V DS=100 V,

V GS=-10 V, T j=25 °C

-

0.1

µA

V DS=100 V,

V GS=-10 V, T j=125 °C

--

10

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

nA

On-state drain current

I DSS

V GS=0 V, V DS=10 V

90

-

mA

Drain-source on-state resistance

R DS(on)

V GS=0 V, I D=0.05 A

-

5.3

12

Ω

V GS=10 V, I D=0.17 A

-

2.9

6

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=0.14 A

0.10

0.19

-

S

Threshold voltage V GS(th) sorted in bands

2)

J

V GS(th)

V DS=3 V, I D=50 µA

-2

-

-1.8

V

K

-2.15

-

-1.95

L

-2.3

-

-2.1

M

-2.45

-

-2.25

N

-2.6

-

-2.4

2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific

band cannot be ordered separately.

Values

Rev. 1.

3

page 2

200

7-02-07

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