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BSS123 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSS123 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2010-05-12 Page 1 Rev. 1.41 BSS123 SIPMOS Small-Signal-Transistor Product Summary VDS 100 V RDS(on) 6 Ω ID 0.17 A Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated PG-SOT23 1 2 3 VPS05161 Gate pin1 Drain pin 3 Source pin 2 Marking SAs SAs Type Package Pb-free Tape and Reel Information BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.17 0.14 A Pulsed drain current TA=25°C ID puls 0.68 Reverse diode dv/dt IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD Sensitivity (HBM) as per MIL-STD 883 Class 1a Power dissipation TA=25°C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 • Qualified according to AEC Q101 |
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