BSP75N_08 datasheet(8/15 Pages) INFINEON

Part #	BSP75N

Description	Smart Lowside Power Switch

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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BSP75N

SOURCE

DRAIN

IN

V

BB

R

L

PULSE

HITFET BSP 75N

Data Sheet Rev. 1.4

8

2008-07-10

Figure 3

Test circuit for ISO pulse

Conducted Emissions

Acc. IEC 61967-4 (1

Ω/150Ω method)

Typ. V

bb Emissions at PWM-mode with

150

Ω-matching network

-20

-10

0

10

20

30

40

50

60

70

80

90

100

0,1

1

10

100

1000

f / MHz

Noise level

BSP75N

150ohm Class6

150ohm Class1

150

Ω / 8-H

150

Ω / 13-N

150

Ω-Network

BSP75N

SOURCE

DRAIN

IN

V

BB

R

L

Figure 4

Test circuit for conducted

emission

1)

Conducted Susceptibility

Acc. 47A/658/CD IEC 62132-4 (Direct

Power Injection)

Direct Power Injection: Forward Power

CW

Failure Criteria: Amplitude or frequency

variation max. 10% at OUT

Typ. V

bb Susceptibility at DC-ON/OFF

and at PWM

0

5

10

15

20

25

30

35

40

1

10

100

1000

f / MHz

Limit

OUT, ON

OUT, OFF

OUT, PWM

HF

BSP75N

SOURCE

DRAIN

IN

V

BB

R

L

B A N

Test circuit for conducted susceptibility

2)

1)

For defined de coupling and high reproducibility a

defined choke (5

µH at 1MHz) is inserted in the

Vbb-Line.

2)

Broadband Artificial Network (short: BAN) consists

of the same choke (5

µH at 1MHz) and the same

150 Ohm-matching

network

as

for

emission

measurement for defined de coupling and high

reproducibility.

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