BSP52 datasheet(2/8 Pages) INFINEON

Part #	BSP52

Description	NPN Silicon Darlington Transistors

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 8 page

2007-03-30

2

BSP50-BSP52

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

RthJS

≤ 17

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BSP50

IC = 10 mA, IB = 0 , BSP51

IC = 10 mA, IB = 0 , BSP52

V(BR)CEO

45

60

80

-

V

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BSP50

IC = 100 µA, IE = 0 , BSP51

IC = 100 µA, IE = 0 , BSP52

V(BR)CBO

60

80

90

-

Emitter-base breakdown voltage

IE = 100 µA, IC = 0

V(BR)EBO

5

-

Collector-emitter cutoff current

VCE = VCE0max, VBE = 0

ICES

-

10

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

-

10

µA

DC current gain2)

IC = 150 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

hFE

1000

2000

-

Collector-emitter saturation voltage2)

IC = 500 mA, IB = 0.5 mA

IC = 1 A, IB = 1 mA

VCEsat

-

1.3

1.8

V

Base emitter saturation voltage2)

IC = 500 mA, IB = 0.5 mA

IC = 1 mA, IB = 1 A

VBEsat

-

1.9

2.2

1For calculation of RthJA please refer to Application Note Thermal Resistance

2Pulse test: t < 300µs; D < 2%

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