BSO207PH datasheet(2/9 Pages) INFINEON

Part #	BSO207PH

Description	OptiMOS P-Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSO207P H

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - soldering point

R thJS

-

35

K/W

Thermal resistance,

junction - ambient

R thJA

minimal footprint,

t p≤10 s

-

110

minimal footprint,

steady state

-

150

6 cm

2 cooling area1),

t p≤10 s

-

62.5

6 cm

2 cooling area1),

steady state

--

80

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS

V GS=0 V, I D= -

0.25 mA

-20

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=44 µA

-0.6

-0.9

-1.2

Zero gate voltage drain current

I DSS

V DS=-20 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=-20 V, V GS=0 V,

T j=150 °C

-

10

100

Gate-source leakage current

I GSS

V GS= -12 V, V DS=0 V

-

-100

nA

Drain-source on-state resistance

R DS(on)

V GS=2.5 V, I D=-4.5 A

-44

70

m

Ω

V GS=4.5 V, I D=-5.7 A

-32

45

Gate resistance

R G

-

7.7

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-4.6 A

10

18

-

S

3) See figure 13 for more detailed information

Values

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) See figure 3 for more detailed information

Rev.1.3

page 2

2010-01-21

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