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BSO207PH Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSO207PH Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page BSO207P H Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1100 1650 pF Output capacitance C oss - 380 570 Reverse transfer capacitance Crss - 310 465 Turn-on delay time t d(on) - 9 14 ns Rise time t r -22 33 Turn-off delay time t d(off) -33 50 Fall time t f -35 53 Gate Charge Characteristics 4) Gate to source charge Q gs --2 -3 nC Gate charge at threshold Q g(th) --2 -3 Gate to drain charge Q gd --5 -7 Switching charge Q sw --5 -7 Gate charge total Q g - -12 -16 Gate plateau voltage V plateau - -1.7 -2.5 V Output charge Q oss V DD=-10 V, V GS=0 V -7 9 nC Reverse Diode Diode continuous forward current I S - - -2.2 A Diode pulse current I S,pulse - - -23 Diode forward voltage V SD V GS=0 V, I F=-5.7 A, T j=25 °C - - -1.1 V Reverse recovery charge Q rr V R=10 V, I F=I S, di F/dt =100 A/µs - 6.2 - nC 4) See figure 16 for gate charge parameter definition T A=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=-10 V, V GS=4.5 V, I D=-5.7 A, R G=1.6 Ω V DD=-10 V, I D=-5.7 A, V GS=0 to 4.5 V Rev.1.3 page 3 2010-01-21 |
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