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BGA915N7 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # BGA915N7
Description  Silicon Germanium GPS Low Noise Amplifier
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BGA915N7 Datasheet(HTML) 9 Page - Infineon Technologies AG

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BGA915N7
Maximum Ratings
Data Sheet
9
Revision 4.0, 2011-03-23
1
Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Thermal Resistance
Table 2
Maximum Ratings
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Voltage at pin VCC
V
CC
-0.3
3.6
V
1)
1) All voltages refer to VSS-Node unless otherwise noted
Voltage at pin AI
V
AI
-0.3
0.9
V
Voltage at pin BIAS
V
BIAS
-0.3
0.9
V
Voltage at pin AO
V
AO
-0.3
V
CC + 0.3
V
Voltage at pin PON
V
PON
-0.3
V
CC + 0.3
V
Voltage at pin VSS
V
SS
-0.3
0.3
V
Current into pin VCC
I
CC
––20
mA
RF input power
P
IN
––0dBm
Total power dissipation,
T
S < 129 °C
2)
2)
T
S is measured on the ground lead at the soldering point
T
J
––72
mW
Junction temperature
P
tot
––150
°C
Ambient temperature range
T
A
-40
85
°C
Storage temperature range
T
STG
-65
150
°C
ESD capability all pins
V
ESD_HBM
2000
V
according to
JESD22A-114
ESD capability all pins
V
ESD_MM
100
V
according to
JESD22A-115
Table 3
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
1) For calculation of
R
thJA please refer to Application Note Thermal Resistance
R
thJS
291
K/W


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