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BFS483 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFS483 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2007-04-26 BFS483 1 1 6 2 3 5 4 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistor in one package • For orientation in reel see package information below • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description EHA07196 6 54 3 2 1 C1 E2 B2 C2 E1 B1 TR1 TR2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFS483 RHs 1=B 2=E 3=C 4=B 5=E 6=C SOT363 1Pb-containing package may be available upon special request |
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