2007-04-26

BFS483

1

1

6

2

3

5

4

NPN Silicon RF Transistor*

• For low noise, high-gain broadband amplifiers at

collector currents from 2 mA to 30 mA

• Two (galvanic) internal isolated

Transistor in one package

• For orientation in reel see

package information below

• Qualified according AEC Q101

* Short term description

EHA07196

6

54

3

2

1

C1

E2

B2

C2

E1

B1

TR1

TR2

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFS483

RHs

1=B

2=E

3=C

4=B

5=E

6=C

SOT363