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BFP520 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BFP520 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 10 page  2010-08-16 BFP520 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 450 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 2.5 3 3.5 V Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 10 V, VBE = 0 ICES - - 1 - 30 1000 nA Collector-base cutoff current VCB = 2 V, IE = 0 ICBO - - 30 Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - 100 3000 DC current gain IC = 20 mA, VCE = 2 V, pulse measured hFE 70 110 170 - 1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance |
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