BFP450_10 datasheet(10/27 Pages) INFINEON

Part #	BFP450

Description	High Linearity Low Noise Si NPN RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BFP450

Electrical Characteristics

Data Sheet

10

Revision 1.0, 2010-10-22

4

Electrical Characteristics

4.1

DC Characteristics

4.2

General AC Characteristics

Table 3

DC Characteristics at

T

A =25°C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Collector emitter breakdown voltage

V

(BR)CEO

4.5

5–V

I

C =1mA, IB =0

Open base

Collector emitter leakage current

I

CES

––

10

µA

V

CE =15V, VBE =0

–1

30

nA

V

CE =3V, VBE =0

Emitter/base shortened

Collector base leakage current

I

CBO

–1

30

nA

V

CB =3V, IE =0

Open emitter

Emitter base leakage current

I

EBO

–0.1

3

µA

V

EB =0.5 V, IC =0

Open collector

DC current gain

h

FE

60

95

130

V

CE =4V, IC =50mA

50

85

120

V

CE =3V, IC =90mA

Pulse measured

Table 4

General AC Characteristics at

T

A =25°C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Transition frequency

f

T

18

24

–

GHz

V

CE =3V, IC =90mA,

f =1GHz

Collector base capacitance

C

CB

–

0.48

0.8

pF

V

CB =3V, VBE =0 V

f =1MHz

Emitter grounded

Collector emitter capacitance

C

CE

–1.2

–

pF

V

CE =3V, VBE =0 V

f =1MHz

Base grounded

Emitter base capacitance

C

EB

–1.7

–

pF

V

EB =0.5 V, VCB =0 V

f =1MHz

Collector grounded

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