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BFP420F Datasheet(PDF) 5 Page - Infineon Technologies AG |
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BFP420F Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 7 page 2007-04-20 BFP420F 5 For non-linear simulation: · Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. · If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. · Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: · This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. EHA07307 C EE B Transistor Schematic Diagram The common emitter configuration shows the following advantages: · Higher gain because of lower emitter inductance. · Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. |
Similar Part No. - BFP420F_07 |
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Similar Description - BFP420F_07 |
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