BC850B datasheet(5/19 Pages) INFINEON

Part #	BC850B

Description	NPN Silicon AF Transistors

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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5 / 19 page

2007-04-20

5

BC846...-BC850...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC846...

IC = 10 mA, IB = 0 , BC847..., BC850...

IC = 10 mA, IB = 0 , BC848..., BC849...

V(BR)CEO

65

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC846...

IC = 10 µA, IE = 0 , BC847..., BC850...

IC = 10 µA, IE = 0 , BC848..., BC849...

V(BR)CBO

80

50

30

-

Emitter-base breakdown voltage

IE = 0 , IC = 10 µA

V(BR)EBO

-

6

-

Collector-base cutoff current

VCB = 45 V, IE = 0

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

0.015

5

-

µA

DC current gain1)

IC = 10 µA, VCE = 5 V, hFE-grp.A

IC = 10 µA, VCE = 5 V, hFE-grp.B

IC = 10 µA, VCE = 5 V, hFE-grp.C

IC = 2 mA, VCE = 5 V, hFE-grp.A

IC = 2 mA, VCE = 5 V, hFE-grp.B

IC = 2 mA, VCE = 5 V, hFE-grp.C

hFE

-

110

200

420

140

250

480

180

290

520

-

220

450

800

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

90

200

250

600

mV

Base emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

900

-

Base-emitter voltage1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

580

-

660

-

700

770

1Pulse test: t < 300µs; D < 2%

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