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BCR562 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BCR562 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page  2007-07-24 1 BCR562 1 2 3 PNP Silicon Digital Transistor • Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 EHA07183 3 2 1 C E B R1 R 2 Type Marking Pin Configuration Package BCR562 XUs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 30 Input reverse voltage Vi(rev) 10 Collector current IC 500 mA Total power dissipation- TS ≤ 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 215 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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