Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SFT5001 __ __ __ __

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TX = TX Level

TXV = TXV Level

S = S Level

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UB = Up Bend

DB = Down Bend

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R = Optional

/66 = TO-66

J = TO-257

S.5 = SMD .5

SFT5001

5 AMPS

125 Volts

High Speed

PNP Transistor

Features:

• Radiation Tolerant

• Superior to JEDEC 2N5001 Series

• High Frequency, f

• Very Low Saturation

• Fast Switching, 130 ns Max t(on)

• Designed for Complementary Use with

SFT3997

• TX, TXV, S-Level Screening Available.

Consult Factory.

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

80

Volts

Collector – Base Voltage

125

Volts

Emitter – Base Voltage

7

Volts

Collector Current

5

Amps

Base Current

1

Amps

Derate Above 100ºC

30

0.3

Watts

W/ºC

Operating & Storage Temperature

-65 to +200

ºC

Maximum Thermal Resistance

(Junction to Case)

3.33

ºC/W

TO-59 (/59)

TO-66 (/66)

TO-257 (J)

SMD .5 (S.5)

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0099A

DOC