RJL5013DPE datasheet(3/7 Pages) RENESAS

Part #	RJL5013DPE

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

RJL5013DPE

Preliminary

R07DS0359EJ0200 Rev.2.00

Page 3 of 6

Apr 18, 2011

Main Characteristics

20

16

12

8

4

0

4

8

12

16

20

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

1

10

0.1

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current (Typical)

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature (Typical)

02468

10

100

0.1

1

0.01

0

0.4

0.8

1.2

1.6

-25

0

50

25

75

100 125 150

0.001

0.01

0.1

1

10

100

0.1

1

10

100

1000

0.1

1

10

100

1000

100

10

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time (Typical)

di / dt = 100 A /

μs

VGS = 0, Ta = 25°C

VGS = 10 V

Pulse Test

7 A

ID = 14 A

VDS = 10 V

Pulse Test

Tc = 75

°C

25

°C

−25°C

3 A

5 V

4.8 V

4.6 V

V

GS = 4.4 V

5.2 V

5.4 V

5.6 V

6 V

Ta = 25

°C

Pulse Test

Tc = 25

°C

1 shot

Operation in this

area is limited by

RDS(on)

10

μs

8 V, 10 V

110

100

VGS = 10 V

Ta = 25

°C

Pulse Test

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