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RJK0329DPB-01-J0 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJK0329DPB-01-J0 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJK0329DPB-01 Preliminary R07DS0265EJ0500 Rev.5.00 Page 3 of 6 Mar 01, 2011 Main Characteristics Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Typical Transfer Characteristics Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 100 80 60 40 20 0 2 468 10 100 80 60 40 20 0 12 3 4 5 Tc = 75 °C 25 °C –25 °C VDS = 10 V Pulse Test VGS = 2.6 V Pulse Test 1 0.3 0.1 30 300 1 10 100 1000 3 200 150 100 50 0 4 8 12 16 20 Pulse Test ID = 20 A 10 A 10 3 VGS = 4.5 V 10 V 2.8 V 3.0 V 10 V 3.2 V 4.5 V Pulse Test 5 A Case Temperature Tc (°C) Power vs. Temperature Derating 80 60 40 20 0 50 100 150 200 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 0.1 1 10 100 10 100 1000 1 0.1 100 μs PW = 10 ms 1 ms 10 μs Operation in this area is limited by RDS(on) Tc = 25 °C 1 shot Pulse |
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