RJL6014DPP-00-T2 datasheet(1/7 Pages) RENESAS

Part #	RJL6014DPP-00-T2

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0262EJ0200 Rev.2.00

Page 1 of 6

Mar 01, 2011

Preliminary Datasheet

RJL6014DPP

Silicon N Channel MOS FET

High Speed Power Switching

Features

 Built-in fast recovery diode

trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)

 Low on-resistance

RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)

 Low leakage current

 High speed switching

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

1

2

3

D

S

G

1. Gate

2. Drain

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

600

V

Gate to source voltage

VGSS

30

V

Drain current

ID

Note4

15

A

Drain peak current

ID (pulse)

Note1

45

A

Body-drain diode reverse drain current

IDR

15

A

Body-drain diode reverse drain peak current

IDR (pulse)

Note1

45

A

Avalanche current

IAP

Note3

4

A

Avalanche energy

EAR

Note3

0.87

mJ

Channel dissipation

Pch

Note2

35

W

Channel to case thermal impedance

ch-c

3.57

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at Tc = 25

C

3. STch = 25

C, Tch  150C

4. Limited by maximum safe operation area

R07DS0262EJ0200

(Previous: REJ03G1853-0100)

Rev.2.00

Mar 01, 2011

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