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BCR12CM-16LH Datasheet(PDF) 2 Page - Renesas Technology Corp |
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BCR12CM-16LH Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page BCR12CM-16LH Preliminary R07DS0261EJ0100 Rev.1.00 Page 2 of 7 Mar 09, 2011 Electrical Characteristics BCR12CM-16LH-1 (IGT item: 1) BCR12CM-16LH Parameter Symbol Min. Typ. Max. Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 2.0 — — 2.0 mA Tj = 150 C VDRM applied On-state voltage VTM — — 1.5 — — 1.5 V Tc = 25 C, I TM = 20 A instantaneous measurement — — — 1.5 — — 1.5 V — — — 1.5 — — 1.5 V Gate trigger voltage Note2 — — — 1.5 — — 1.5 V Tj = 25 C, V D = 6 V RL = 6 , RG = 330 — — — 35 — — 50 mA — — — 35 — — 50 mA Gate trigger curent Note2 — — — 35 — — 50 mA Tj = 25 C, V D = 6 V RL = 6 , RG = 330 0.2 — — 0.2 — — V Tj = 125 C VD = 1/2 VDRM Gate non-trigger voltage VGD 0.1 — — 0.1 — — V Tj = 150 C VD = 1/2 VDRM Thermal resistance Rth (j-c) — — 1.8 — — 1.8 C/W Junction to case Note3,4 Critical-rate of decay of on-state commutating current Note5 (di/dt)c 7 — — 13 — — A/ms Tj = 125 C (dv/dt)c < 100 V/ s Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 tab 1.5 mm apart from the molded case. 4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. 5. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125 C 2. Peak off-state voltage VD = 400 V 2. Rate of rise of off-state commutating voltage (dv/dt)c < 100 V/ s Supply Voltage Time Time Time Main Current Main Voltage (di/dt)c VD (dv/dt)c |
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