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© 2008 IXYS CORPORATION, All rights reserved Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1700 V V CGR T J = 25°C to 150°C, RGE = 1MΩ 1700 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C 160 A I C90 T C = 90°C 95 A I CM T C = 25°C, 1ms 600 A SSOA V GE = 15V, TVJ = 125°C, RG = 1Ω I CM = 200 A (RBSOA) Clamped inductive load @ 0.8 • V CES t sc V GE = 15V, VCE = 1250V, TJ = 125°C 10 μs (SCSOA) R G = 10Ω, non repetitive P C T C = 25°C 735 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C V ISOL 50/60Hz t = 1min 2500 V~ I ISOL ≤ 1mA t = 1s 3000 V~ M d Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque (M4) 1.3/11.5 Nm/lb.in. Weight 30 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. BV CES I C = 3mA, V GE = 0V 1700 V V GE(th) I C = 8mA, V CE = VGE 3.0 5.0 V I CES V CE = VCES 50 μA V GE = 0V T J = 125°C 5 mA I GES V CE = 0V, VGE = ±20V ±200 nA V CE(sat) I C = 100A, V GE = 15V, Note 1 2.5 3.0 V DS100091(12/08) High Voltage IGBT IXGN100N170 V CES = 1700V I C90 = 95A V CE(sat) ≤ ≤≤≤≤ 3.0V SOT-227B, miniBLOC G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter G E E C E153432 E Preliminary Technical Information Features Optimized for low conduction and switching losses Square RBSOA Isolation voltage 3000 V~ High current handling capability International standard package Advantages High power density Low gate drive requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines |
