IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH90N60B3

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

C

= 60A, V

55

90

S

C

ies

8285

pF

C

oes

V

525

pF

C

res

140

pF

Q

g

172

nC

Q

ge

I

C

= 90A, V

28

nC

Q

gc

63

nC

t

d(on)

31

ns

t

ri

47

ns

E

on

1.32

mJ

t

d(off)

150

ns

t

fi

148

250

ns

E

off

1.37

2.40

mJ

t

d(on)

29

ns

t

ri

43

ns

E

on

1.93

mJ

t

d(off)

220

ns

t

fi

253

ns

E

off

2.80

mJ

R

thJC

0.19

°C/W

R

thCS

0.21

°C/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

e

∅ P

TO-247 AD Outline