IXGP50N60B4 datasheet(1/6 Pages) IXYS

Part #	IXGP50N60B4

Description	High-Gain IGBTs

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Manufacturer	IXYS [IXYS Corporation]

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IXGA50N60B4

IXGP50N60B4

IXGH50N60B4

V

CES

= 600V

I

C110

= 36A

V

CE(sat)

≤≤≤≤≤ 1.80V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 150°C

600

V

CGR

T

J

= 25°C to 150°C, R

GE = 1MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C

100

A

I

C110

T

C = 110°C

36

A

I

CM

T

C = 25°C, 1ms

230

A

SSOA

V

GE = 15V, TVJ = 125°C, RG = 10Ω

I

CM = 72

A

(RBSOA)

Clamped Inductive Load

V

CE ≤ VCES

P

C

T

C = 25°C

290

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb.

M

d

Mounting Torque (TO-220 & TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

DS100319A(04/11)

G = Gate

D

= Collector

S = Emitter

Tab = Collector

TO-247 (IXGH)

G

E

C

C (Tab)

TO-263 AA (IXGA)

G

E

C (Tab)

G

C E

TO-220AB (IXGP)

C (Tab)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified

Min.

Typ.

Max.

BV

CES

I

C

= 250

μA, V

GE = 0V

600

V

GE(th)

I

C

= 250

μA, V

CE = VGE

4.0

6.5

V

I

CES

V

CE = VCES, VGE = 0V

25

μA

T

J = 125°C

1 mA

I

GES

V

CE = 0V, VGE = ±20V

±100 nA

V

CE(sat)

I

C

= 36A, V

GE = 15V, Note 1

1.43

1.80

V

T

J = 125°C

1.40

V

High-Gain IGBTs

Low-Vsat PT Trench IGBT

Features

Optimized for Low Conduction and

Switching Losses

International Standard Packages

Square RBSOA

Advantages

Easy to Mount

Space Savings

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Lamp Ballasts

Preliminary Technical Information

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