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IXFR30N110P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFR30N110P Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page © 2008 IXYS CORPORATION, All rights reserved DS99898A(04/08) V DSS = 1100V I D25 = 16A R DS(on) ≤≤≤≤≤ 400mΩ Ω Ω Ω Ω t rr ≤≤≤≤≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 1100 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 1100 V V GSS Continuous ± 30 V V GSM Transient ± 40 V I D25 T C = 25°C16 A I DM T C = 25°C, pulse width limited by TJM 75 A I AR T C = 25°C15 A E AS T C = 25°C 1.5 J dV/dt I S ≤ I DM, VDD ≤ VDSS,TJ ≤ 150°C 15 V/ns P D T C = 25°C 320 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L Maximum lead temperature for soldering 300 °C T SOLD Plastic body for 10s 260 °C V ISOL 50/60 Hz, RMS, 1 minute 2500 V~ F C Mounting force 20..120/4.5..27 N/lb. Weight 5g G = Gate D = Drain S = Source Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 3mA 1100 V V GS(th) V DS = VGS, ID = 1mA 3.5 6.5 V I GSS V GS = ± 30V, VDS = 0V ± 200 nA I DSS V DS = VDSS 50 μA V GS = 0V T J = 125°C 2.5 mA R DS(on) V GS = 10V, ID = 15A, Note 1 400 m Ω Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<30pF) • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Advantages • Easy assembly • Space savings • High power density Isolated Tab ISOPLUS247 (IXFR) E153432 IXFR30N110P PolarTM Power MOSFET HiPerFETTM Applications: High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters |
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