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IXFQ24N50P2 Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXFQ24N50P2
Description  PolarP2 HiperFET Power MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFQ24N50P2 Datasheet(HTML) 2 Page - IXYS Corporation

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFQ24N50P2
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS = 20V, ID = 0.5 • ID25, Note 1
14
24
S
C
iss
2890
pF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
280
pF
C
rss
22
pF
t
d(on)
15
ns
t
r
9
ns
t
d(off)
30
ns
t
f
5
ns
Q
g(on)
48
nC
Q
gs
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
13
nC
Q
gd
16
nC
R
thJC
0.26 °C/W
R
thCS
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
24
A
I
SM
Repetitive, Pulse Width Limited by T
JM
96
A
V
SD
I
F = IS, VGS = 0V, Note 1
1.3
V
t
rr
200 ns
I
RM
10
A
Q
RM
0.69
μC
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Note 1. Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
R
G = 10Ω (External)
I
F = 12A, -di/dt = 100A/μs
V
R = 100V, VGS = 0V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-3P (IXFQ) Outline


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