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IXFN132N50P3 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN132N50P3 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2011 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ 500 V V GSS Continuous ±30 V V GSM Transient ±40 V I D25 T C = 25°C 112 A I DM T C = 25°C, Pulse Width Limited by TJM 330 A I A T C = 25°C 66 A E AS T C = 25°C3 J dv/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns P D T C = 25°C 1500 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C V ISOL 50/60 Hz, RMS, t = 1minute 2500 V~ I ISOL ≤ 1mA, t = 1s 3000 V~ M d Mounting Torque for Base Plate 1.5/13 Nm/lb.in. Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 3mA 500 V V GS(th) V DS = VGS, ID = 8mA 3.0 5.0 V I GSS V GS = ±30V, VDS = 0V ±200 nA I DSS V DS = VDSS, VGS = 0V 50 μA T J = 125°C 6 mA R DS(on) V GS = 10V, ID = 66A, Note 1 39 m Ω IXFN132N50P3 V DSS = 500V I D25 = 112A R DS(on) ≤ ≤≤≤≤ 39m Ω Ω Ω Ω Ω t rr ≤≤≤≤≤ 250ns DS100316(03/11) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Advance Technical Information Polar3TM HiPerFETTM Power MOSFET miniBLOC E153432 G D S S G = Gate D = Drain S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features International Standard Package miniBLOC with Aluminum Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low R DS(on) and QG Advantages Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications |
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