IXFN80N50Q3

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

35

55

S

C

iss

10

nF

C

oss

V

1260

pF

C

rss

115

pF

R

Gi

Gate Input Resistance

0.15

Ω

t

d(on)

30

ns

t

r

20

ns

t

d(off)

43

ns

t

f

15

ns

Q

g(on)

200

nC

Q

gs

V

77

nC

Q

gd

90

nC

R

thJC

0.16

°C/W

R

thCS

0.05

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

80

A

I

SM

Repetitive, Pulse Width Limited by T

JM

320

A

V

SD

I

1.4

V

t

rr

250 ns

Q

RM

1.8

μC

I

RM

15.6

A

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

V

R

I

V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

(M4 screws (4x) supplied)

SOT-227B (IXFN) Outline