IXFK30N110P datasheet(1/4 Pages) IXYS

Part #	IXFK30N110P

Description	Polar Power MOSFET HiPerFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1100

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1100

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C30

A

I

DM

T

C = 25°C, pulse width limited by TJM

75

A

I

AR

T

C = 25°C15

A

E

AS

T

C = 25°C

1.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

15

V/ns

P

D

T

C = 25°C

960

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque

(IXFK)

1.13/10

Nm/lb.in.

F

C

Mounting force

(IXFX)

20..120 /4.5..27

N/lb

Weight

(IXFK)

10

g

(IXFX)

6

g

G = Gate

D = Drain

S = Source

TAB = Drain

PolarTM Power MOSFET

HiPerFETTM

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

Fast intrinsic diode

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

IXFK30N110P

IXFX30N110P

V

DSS

=

1100V

I

D25

=

30A

R

DS(on) ≤

≤≤≤≤

360m

Ω

t

rr

≤≤≤≤≤

300ns

DS99855B(04/08)

PLUS247 (IXFX)

TO-264 (IXFK)

S

G

D

(TAB)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

1100

V

GS(th)

V

DS = VGS, ID = 1mA

3.5

6.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 200

nA

I

DSS

V

DS = VDSS

50

μA

V

GS = 0V

T

J = 125°C

2.5

mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

360

m

Ω

Applications:

High Voltage Switched-mode and

resonant-mode power supplies

High Voltage Pulse Power Applications

High Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF

Generators

High Voltage DC-DC converters

High Voltage DC-AC inverters

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